Seeking Technologies or Capabilities to Improve the Sensitivity of Photodiode Detectors

Background / Description

IPI is working with our Open Innovation partner in UK to seek technologies or capabilities to improve the sensitivity of photodiode detectors.

Current photodiode detectors are based on materials such as InGaAs (Indium Gallium Arsenide) which operate up to 2.5 µm. Whilst there are materials such as HgCdTe (MCT or Mercury Cadmium Telluride) that allow this enhanced performance up to 14 µm, they are predominantly used for military and defence applications (and therefore export regulations make them unattractive for use).

The client is an established company in the spectroscopy field and is keen to identify technologies and/or capabilities to enhance the sensitivity in longer molecular absorption wavelengths, by concentrating on the infra-red spectral band between 2.5 – 5.5 µm (can be wider). This would enable them to expand their product offering in gas analysis as well as other potential applications.

Technical Specifications

The client wishes to identify enabling technologies that have:

  • Operational between 2.5 µm to 5.5 µm range
  • Detectivity greater than that of pyroelectric detectors
  • Specific Detectivity, D* > 109.

 Potential solutions could be (but not limited to):

  • Alternative materials, e.g. Indium Arsenide Antimonide (InAsSb)
  • Varying the composition of the materials used
  • Modification of band structure

Preferred Business Model

  • R&D Collaboration
  • Business Collaboration (Joint Venture, Distribution)

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