Conventional semiconductor technologies have nearly reached their physical limits and it is necessary to look for replacements. It is important that these new materials and principles allow for a high density of functional memory units at the lowest energy intensity of their use. One of the major candidates for new types of memory is resistive switching based on the creation of a reformable conductive pathway between electrodes separated by the ionic conductor, i.e. Electrochemical Metallization (ECM) cell.
Conventional ECM device comprises of an inert electrode (e.g. Al, Pt or W), an active electrode (e.g. Ag or Cu) and a metal doped electrolyte (e.g. Ag or Cu doped chalcogenide compounds or certain oxides). However, the active electrode is vulnerable to thermal or photo degradation; the Ag or Cu element would continuously dissolve into the electrolyte, causing the detachment between the active electrode and electrolyte. Moreover, the continuous dissolution of Ag or Cu from active electrode increases the concentration of Ag or Cu dopants in the electrolyte. These cause device failures and limit the development of conventional ECM based Resistive Random Access Memory (RRAM) device.
A novel ECM based RRAM device that is able to avoid excessive dissolution of active electrode into the electrolyte, and is also highly resistant to thermal and photo degradation is described herein. Besides the stability to memory switching (>107 cycles), the novel ECM RRAM device has fast operational speed.
The described technology composes of:
As the device exhibits thermal and radiation stability on top of excellent RRAM properties, it can be used in: